| PART |
Description |
Maker |
| PEB2045 PEF2045 PEB2045-N PEB2045-P PEF2045-N PEF2 |
Memory Time Switch CMOS (MTSC) TELECOM, DIGITAL TIME SWITCH, PDIP40
|
SIEMENS AG
SIEMENS A G
|
| AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
IC SMT SRAM 128K X 8 70NS 5V SOP-32
SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区32引脚闪存
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| MX29LV400TMC-55 MX29LV400BXBC-55R |
Access time: 55ns; 4M-bit (512K x 8/256K x 16) CMOS single voltage 3V only flash memory
|
Macronix International
|
| CAT28F002 CAT28F002PI-90BT CAT28F002NI-90BT CAT28F |
90ns 2M-bit CMOS boot block flash memory
150ns 2M-bit CMOS boot block flash memory
120ns 2M-bit CMOS boot block flash memory
2 Megabit CMOS Boot Block Flash Memory
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http://
CATALYST[Catalyst Semiconductor]
|
| CD22101 CD22101E CD22101F CD22102 CD22102E |
CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory
|
HARRIS[Harris Corporation]
Intersil Corporation
|
| AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|
| M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IDT7200L IDT7201LA IDT7202LA |
CMOS ASYCHRONOUS FIFO 256 x 9 Memory(CMOS异步先进先出256x 9位存储器)
CMOS ASYCHRONOUS FIFO 512 x 9 Memory(CMOS异步先进先出512x 9位存储器)
CMOS ASYCHRONOUS FIFO 1024 x 9 Memory(CMOS异步先进先出1024x 9位存储器) 的CMOS异步先进先出存储024 × 9的CMOS（异步先进先024x 9位存储器
|
Intersil Corporation
Intersil, Corp.
|
| BD5323FVE-TR BD5323G-TR BD5240G-TR BD5242G-TR BD52 |
Free Delay Time Setting CMOS Voltage Detector IC Series
Delay time controlled by extemal capacitor
Free Delay Time Setting CMOS Voltage Detector IC Series
Delay Time Controlled by external Capacitor, Two output types
Highly accurate, low current consumption Voltage Detector ICs with a capacitor-controlled time delay.
|
Rohm
|
| IDT72V265LA15PF IDT72V265LA15PFI 72V255LA15PF 72V2 |
MICROCIRCUIT, MEMORY, CMOS (STQFP) REV -
IC MEMORY FIFO SYNCHRONOUS 3.3V 8K X 18 OTHER FIFO, 10 ns, PQFP64
3.3 VOLT CMOS SuperSync FIFO 8,192 x 18 16,384 x 18
|
Integrated Device Techn...
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
Integrated Device Technolog...
|
